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| SEMICONDUCTOR TECHNICAL DATA Order this document by MRF16030/D The RF Line NPN Silicon MRF16030 30 WATTS, 1.6 GHz RF POWER TRANSISTOR NPN SILICON RF Power Transistor Designed for 28 Volt microwave large-signal, common base, Class-C CW amplifier applications in the range 1600 - 1640 MHz. * Specified 28 Volt, 1.6 GHz Class-C Characteristics Output Power = 30 Watts Minimum Gain = 7.5 dB, @ 30 Watts Minimum Efficiency = 40% @ 30 Watts * Characterized with Series Equivalent Large-Signal Parameters from 1500 MHz to 1700 MHz * Silicon Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration CASE 395C-01, STYLE 2 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Collector-Emitter Voltage Emitter-Base Voltage Collector-Current Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Symbol VCES VEBO IC PD Tstg Value 60 4.0 4.0 103 0.58 - 65 to +150 Unit Vdc Vdc Adc Watts C/W C THERMAL CHARACTERISTICS Thermal Resistance -- Junction to Case (1) (2) RJC 1.7 C/W (1) Thermal measurement performed using CW RF operating condition. (2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 3 1 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 28 Vdc, VBE = 0) V(BR)CES 55 V(BR)CBO 55 V(BR)EBO ICES -- -- 10 4.0 -- -- mAdc -- -- Vdc -- -- Vdc Vdc ON CHARACTERISTICS DC Current Gain (ICE = 1.0 Adc, VCE = 5.0 Vdc) hFE 20 35 80 -- FUNCTIONAL TESTS Collector-Base Amplifier Power Gain (VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz) Input Return Loss (VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz) Output Mismatch Stress VCC = 28 Vdc, Pout = 30 Watts, f = 1600 MHz, Load VSWR = 3:1, All phase angles at frequency of test Gpe 7.5 40 IRL 8.0 No Degradation in Output Power -- -- 45 -- dB 7.7 -- % dB REV 3 2 L3 B1 28 Vdc C1 L2 C2 R1 C3 C4 L1 C5 Board Material - Teflon(R) Glass Laminate Dielectric Thickness = 0.30, r = 2.55, 2.0 oz. Copper B1 C1, C5 C2 C3 Fair Rite Bead on #24 Wire 100 pF, B Case, ATC Chip Cap 0.1 F, Dipped Mica Cap 0.1 F, Chip Cap C4 L1, L2 L3 R1 47 F, 50 V, Electrolytic 3 Turns, #18, 0.133 ID, 0.15 Long 9 Turns, #24 Enamel 82 , 1.0 W, Carbon Figure 1. MRF16030 Test Fixture Schematic f = 1.5 GHz 1.7 GHz ZOL* 1.6 GHz Zin 1.6 GHz 1.7 GHz f = 1.5 GHz Zo = 10 VCC = 28 Vdc, Pout = 30 W f MHz Zin Ohms ZOL* Ohms 1500 1600 1700 3.05 + j 4.88 4.32 + j 6.00 5.62 + j 5.79 2.66 + j 2.53 1.79 + j 2.80 1.51 + j 2.64 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Figure 2. Series Equivalent Input/Output Impedance REV 3 3 45 P , OUTPUT POWER (WATTS) out 40 35 30 25 1.64 GHz f = 1.6 GHz VCC = 28 Vdc 20 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 Pin, INPUT POWER (WATTS) 8.0 8.5 9.0 Figure 3. Output Power versus Input Power REV 3 4 PACKAGE DIMENSIONS -A- U 1 Q 2 PL 0.51 (0.020) M TA M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. -B- 3 K 2 D N J H C -T- SEATING PLANE DIM A B C D E H J K N Q U INCHES MIN MAX 0.739 0.750 0.240 0.260 0.165 0.198 0.215 0.225 0.055 0.070 0.079 0.091 0.004 0.006 0.210 0.240 0.315 0.330 0.125 0.135 0.560 BSC MILLIMETERS MIN MAX 18.77 19.05 6.10 6.60 4.19 5.03 5.46 5.72 1.40 1.78 2.01 2.31 0.10 0.15 5.33 6.10 8.00 8.38 3.18 3.42 14.23 BSC E STYLE 2: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 395C-01 ISSUE A Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. REV 3 5 |
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